Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.

Effects of strain on the band structure of group-III nitrides

We present a systematic study of strain effects on the electronic band structure of the group-IIInitrides (AlN, GaN and InN). The calculations are based on density functional theory (DFT) with band-gap-corrected approaches including hybrid functional and quasiparticle G0W0 methods. We study strain effects under realistic strain conditions, hydrostatic pressure and biaxial stress. The strain-ind...

Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe LEDs 59 Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe Light Emitting Diodes

Optically pumped green converter structures based on three-dimensional (3D) inverse pyramids were studied. The green emission intensity is determined by the conversion rate ηc and the absorption fraction ηa, indicating the InGaN/GaN quantum well (QW) crystal quality and its absorption capability, respectively. 15 was found to be the optimal QW number based the epitaxial condition for that serie...

Processing of Semipolar and Nonpolar InGaN Based Laser Diodes

Laser diodes (LDs) based on InGaN quantum well (QW) structures emitting in the blue to green spectral region are of great interest for applications ranging from spectroscopy to laser projectors for mobile devices. Whereas LDs in the blue spectral region are available commercially, the so-called “green gap” is just at the point of being bridged. The necessity of creating InGaN QWs with high indi...

Graded-host phosphorescent light-emitting diodes with high efficiency and reduced roll-off

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High-power low-droop violet semipolar ( 30 3 ̄ 1 ̄ ) InGaN/GaN light-emitting diodes with thick active layer design